Dual source injector with switchable analyzing magnet

ABSTRACT

An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.17/705,503 filed on Mar. 28, 2022, entitled “DUAL SOURCE INJECTOR WITHSWITCHABLE ANALYZING MAGNET”, the contents of which are hereinincorporated by reference in their entirety.

FIELD

The present invention relates generally to ion implantation systems andmethods, and more specifically to a mass analyzing magnet configured formultiple ion sources.

BACKGROUND

Ion implanters are conventionally utilized to place a specified quantityof dopants or impurities within workpieces or semiconductor wafers. In atypical ion implantation system, a dopant material is ionized, thereingenerating a beam of ions, generally referred to as an ion beam. The ionbeam is directed at a surface of the workpiece to implant ions into theworkpiece, wherein the ions penetrate the surface of the workpiece andform regions of desired conductivity therein. For example, ionimplantation has particular use in the fabrication of transistors insemiconductor workpieces. A typical ion implanter comprises an injector,a beamline assembly having a mass analysis apparatus for directingand/or filtering (e.g., mass resolving) ions within the ion beam, and aprocess chamber containing one or more workpieces to be treated.

An ion source associated with the injector typically produces ions,whereby the ions are extracted from the ion source to form the ion beam.A desired ion species is selected to be implanted via an analyzingmagnet, whereby the beamline further modifies the ion beam, includingacceleration, deceleration, scanning, and/or angle control of the ionbeam to define a final ion beam. The process chamber typically receivesthe final ion beam for implantation into the workpiece.

Conventional injectors often suffer from so-called “ion source life”issues associated with erosion of cathodes and material depositionwithin the ion source, as well as flaking and electrical glitchingrelated thereto. Such ion source life issues lead to shortened lifetimesof the ion source, thus demanding maintenance and/or replacement of theion source, whereby productivity of the ion implanter is deleteriouslyaffected.

Some ion implanters implement multiple ion sources for changing from afirst ion species to a second ion species, or for changing ion sourceswhen maintenance of the respective ion source is called for. Suchconventional ion sources, however, typically require a shutdown of allion sources of the ion implanter for removal or maintenance of the ionsource, as harmful x-ray radiation is emitted during operation of theion sources. As such, productivity of the implanter is decreased formaintenance of the ion source or for change-over of source species.

SUMMARY

The present disclosure provides an ion implantation system having aplurality of ion sources, whereby each ion source can be safely andreadily accessed while maintaining operation of the ion implantationsystem. Accordingly, the following presents a simplified summary of thedisclosure in order to provide a basic understanding of some aspects ofthe invention. This summary is not an extensive overview of theinvention. It is intended to neither identify key or critical elementsof the invention nor delineate the scope of the invention. Its purposeis to present some concepts of the invention in a simplified form as aprelude to the more detailed description that is presented later.

In accordance with the present disclosure, an ion implantation system isprovided, wherein the ion implantation system comprises a mass analyzingmagnet comprising a yoke and a coil defining a first entrance, a secondentrance, and an exit of the mass analyzing magnet. One or more of theyoke and the coil, for example, define an interior region and anexterior region of the mass analyzing magnet.

In accordance with one example aspect, a first ion source is configuredto define a first ion beam directed toward the first entrance of themass analyzing magnet along a first beam path. A second ion source isfurther configured to define a second ion beam directed toward thesecond entrance the mass analyzing magnet along a second beam path. Amagnet current source is further configured to supply a magnet currentto the mass analyzing magnet.

In one example, magnet control circuitry is coupled to the massanalyzing magnet and magnet current source, wherein the magnet controlcircuitry is configured to selectively control a polarity of the magnetcurrent supplied to the mass analyzing magnet based on a selectiveformation each of the first ion beam and the second ion beam. The massanalyzing magnet, for example, is configured to mass analyze the firstion beam and second ion beam, respectively, thereby defining a massanalyzed ion beam at the exit of the mass analyzing magnet along a massanalyzed beam path. A plurality of beamline components, for example, arefurther arranged downstream of the mass analyzing magnet and configuredto direct the mass analyzed ion beam towards a workpiece. The pluralityof beamline components, for example, can comprise one or more of anaccelerator, a decelerator, an energy filter, a focusing lens, asteering lens, a measurement system, a scanner, and a corrector.

In accordance with another example aspect, one or more shields arepositioned in one or more of the interior region and exterior region ofthe mass analyzing magnet. The one or more shields, for example, areconfigured to prevent a line-of-sight between the first ion source andthe second ion source. The one or more shields can be configured togenerally prevent a transmission of x-rays between the first ion sourceand the second ion source. For example, at least one of the one or moreshields is comprised of lead.

For example, the one or more shields can comprise a central shieldpositioned between the first entrance and the second entrance of themass analyzing magnet within the interior region of the mass analyzingmagnet. The mass analyzed beam path, for example, defines an exit axis,and wherein the central shield is positioned along the exit axis.

In another example, the one or more shields comprise one or moreexterior magnet shields positioned in the exterior region of the massanalyzing magnet, whereby the one or more exterior magnet shields extendgenerally perpendicular to the exit axis. The one or more exteriorshields, for example, can be positioned run parallel to the exit axis.The one or more exterior shields, for example, comprise an exit aperturedefined along the mass analyzed beam path.

Regarding another example, the first beam path defines a first entranceaxis, and the second beam path defines a second entrance axis. As such,the one or more shields can further comprise a first entrance shield anda second entrance shield respectively positioned along the firstentrance axis and the second entrance axis. The first entrance shieldand the second entrance shield, for example, can be positioned withinthe interior region of the mass analyzing magnet.

In another example, the mass analyzing magnet comprises a dipole magnet,such as a uniform field magnet having substantially flat poles definedtherein. The dipole magnet, for example, is configured to deflect thefirst ion beam and the second ion beam, respectively, by a deflectionangle ranging between approximately 70° and approximately 110° whenviewed along the first beam path and the second beam path, respectively.

In accordance with another aspect of the disclosure, a method formaintaining an ion implantation system is provided. According to oneexample, the method comprises applying a polarity of a magnet current toa mass analyzing magnet, whereby one or more shields are provided withinthe mass analyzing magnet. A first source current is applied to a firstion source, thereby forming and directing a first ion beam toward afirst entrance of a mass analyzing magnet along a first beam path. Thefirst ion beam is further mass analyzed, whereby the first ion beam isdeflected between approximately 70° and approximately 110°. The firstsource current applied to the first ion source is further halted,thereby extinguishing the first ion beam.

The polarity of the magnet current applied to the mass analyzing magnet,for example, is reversed, and a second source current is applied to asecond ion source. As such, a second ion beam is formed and directedtoward a second entrance of the mass analyzing magnet along a secondbeam path, whereby the second ion beam is mass analyzed deflectedbetween approximately 70° and approximately 110°.

Accordingly, maintenance can be performed on the first ion sourceconcurrent to forming the second ion beam, whereby a line-of-sightbetween the first ion source and second ion source is prevented by theone or more shields positioned within the mass analyzing magnet, wherebyx-ray transmission from the second ion source is generally blocked fromreaching the first ion source.

To the accomplishment of the foregoing and related ends, the inventioncomprises the features hereinafter fully described and particularlypointed out in the claims. The following description and the annexeddrawings set forth in detail certain illustrative embodiments of theinvention. These embodiments are indicative, however, of a few of thevarious ways in which the principles of the invention may be employed.Other objects, advantages and novel features of the invention willbecome apparent from the following detailed description of the inventionwhen considered in conjunction with the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1B are schematic diagrams illustrating an example ionimplantation system having multiple ion sources and a single beamline inaccordance with various aspects of the present invention.

FIG. 2 is a perspective schematic diagram of an example mass analyzingmagnet in accordance with various aspects of the present invention.

FIG. 3A is a schematic view of an example mass analyzing magnet having afirst polarity applied to a coil in accordance with various aspects ofthe present invention.

FIG. 3B is a schematic view of the example mass analyzing magnet of FIG.3A having a second polarity applied to the coil in accordance withvarious aspects of the present invention.

FIG. 4 is a partial cross-sectional plan view of an example massanalyzing magnet in accordance with various aspects of the presentinvention.

FIG. 5 is a partial cross-sectional plan view of an example massanalyzing magnet having a shield in accordance with various aspects ofthe present invention.

FIG. 6 is a partial cross-sectional plan view of an example massanalyzing magnet having a plurality of shields in accordance withvarious aspects of the present invention.

FIG. 7 illustrates an example method for implanting ions into aworkpiece in accordance with various further aspects of the presentinvention.

DETAILED DESCRIPTION

The present disclosure is directed generally toward an ion implantationsystem and method for implanting ions in a workpiece, wherein a massanalyzing magnet is configured to accept ions generated from a pluralityof ion sources. A shielding apparatus is provided such that each of theplurality of ion sources, for example, can be safely and individuallyaccessed and maintained during operation of any other of the pluralityof ion sources in the system. Accordingly, the present invention willnow be described with reference to the drawings, wherein like referencenumerals may be used to refer to like elements throughout. It should beunderstood that the description of these aspects are merely illustrativeand that they should not be interpreted in a limiting sense. In thefollowing description, for purposes of explanation, numerous specificdetails are set forth in order to provide a thorough understanding ofthe present invention. It will be evident to one skilled in the art,however, that the present invention may be practiced without thesespecific details.

In accordance with various aspects of the disclosure, an ionimplantation system is provided having an injector comprising aplurality of ion sources, thereby increasing productivity of the ionimplantation system. A pair of ion sources, for example, can berespectively configured to produce ions from differing source materials,thereby avoiding memory effects when changing between implants using thediffering source feed materials. Additionally, the present disclosureadvantageously allows for maintenance of a first of the pair of ionsources while a second of the pair ion sources produces ions forimplantation, thus minimizing downtime when compared to conventionalsystems.

Since the ion implantation system of the present utilizes multiple ionsources that can be individually maintained concurrent with operation ofthe ion implantation system, the present disclosure is particularlyadvantageous for applications using radio frequency (RF) ion sources. RFion sources can provide significantly longer lifetimes than conventionalarc-discharge ion sources, but due to the aforementioned memory effectsand radiation concerns, RF ion sources have not been widely implementedfor ion implantation due to the time and complexities of exchanging orcleaning the RF ion sources in conventional systems.

In general, the plurality of ion sources of the present disclosure, forexample, can individually inject an ion beam into separate entrances ofan analyzing magnet having dual polarity, whereby a mass analyzed ionbeam is produced at an exit of the analyzing magnet. As such, commonbeamline components transport the mass analyzed ion beam downstream ofthe analyzing magnet to a common process chamber, thus significantlyreducing costs and complexities associated with conventional implantersemploying two beamlines and a common process chamber.

Referring now to the Figures, FIGS. 1A-1B illustrates an ionimplantation system 100 (also called an ion implanter) in accordancewith various aspects of the present disclosure. The ion implantationsystem 100, for example, comprises a first ion source 102 configured toproduce a first ion beam 104 along a first beam path 106, as illustratedin FIG. 1A. The first ion source 102, for example, comprises a first arcchamber 108, whereby a first source arc current 110 ionizes a firstsource material 112, and whereby the first ion beam 104 is extractedfrom the first ion source via a first extraction apparatus 114 (e.g.,one or more electrodes biased with respect to the first arc chamber108).

A second ion source 116, for example, is further provided, wherein thesecond ion source comprises a second arc chamber 118, whereby a secondsource arc current 120 ionizes a second source material 122, and wherebythe second ion source is configured to produce a second ion beam 124along a second beam path 126, as illustrated in FIG. 1B. The second ionbeam 124, for example, is extracted from the second ion source via asecond extraction apparatus 128 (e.g., one or more electrodes biasedwith respect to the second arc chamber 118).

The ion implantation system 100, for example, further comprises a massanalyzing magnet 130 configured to accept the first ion beam 104 of FIG.1A and the second ion beam 124 of FIG. 1B. For example, the massanalyzing magnet 130 is illustrated in FIG. 2 , includes a fieldgenerating component configured to establish a dipole magnetic fieldwithin the mass analyzing magnet, as will be discussed in furtherdetail, infra. For example, the mass analyzing magnet 130 comprises afirst entrance 132 and a second entrance 134 defined therein, wherebythe first entrance is configured to accept the first ion beam 104 fromthe first ion source 102 of FIG. 1A, and the second entrance isconfigured to accept the second ion beam 124 from the second ion source116 of FIG. 1B. Only ions having the correct charge-to-mass ratio areable to pass through an exit 136 of the mass analyzing magnet 130 and beresolved by a mass resolving aperture 138 in order to continuedownstream to various of the plurality of beamline components 140. Ionsnot having the correct charge-to-mass ratio collide with the walls ofthe mass analyzing magnet 130 and/or the mass resolving aperture 138 andare not passed through the mass resolving aperture.

Magnet control circuitry 142, for example, is further provided andconfigured to supply a magnet current 144 to a coil 146 of the massanalyzing magnet 130. The magnet current 144 applied to the coil 146,whereby in conjunction with a yoke 147 (e.g., steel laminations) shownin FIG. 2 , for example, a magnetic field B is provided based on theintensity and polarity of the magnet current, as seen in FIGS. 3A-3B.

As illustrated in FIG. 3A, for example, the direction of the magneticfield B is given by Maxwell's corkscrew rule. If the magnet current 144runs counter-clockwise (illustrated by counter-clockwise arrows), asillustrated in FIG. 3A, the magnetic field B will point out of the pageplane. The deflection of the first ion beam 104 (e.g., a positive ionbeam) is thus given by Fleming's left-hand rule. Positive ions of thefirst ion beam 104 with velocity v will thus experience a perpendicularforce F and be deflected as illustrated in FIG. 3A.

FIG. 3B illustrates an example for the second ion beam 124 (e.g., apositive ion beam), whereby the magnet current 144 runs clockwise(illustrated by clockwise arrows). Accordingly, the mass analyzingmagnet 130 is configured to individually resolve each of the first ionbeam 104 from the first ion source 102 illustrated in FIG. 1A and thesecond ion beam 124 from the second ion source 116 by simply switchingpolarity of the magnet current 144 in order to define a mass analyzedion beam 148 at the exit 136 of the mass analyzing magnet 130 along amass analyzed beam path 150.

The magnet control circuitry 142 (e.g., a controller or other switchingapparatus), for example, is operably coupled to the mass analyzingmagnet 130 and a magnet current source 151, whereby the magnet controlcircuitry is configured to selectively control the polarity of themagnet current 144 supplied to the mass analyzing magnet based on aselective formation each of the first ion beam 104 and the second ionbeam 124, wherein the mass analyzing magnet is configured torespectively and individually mass analyze the first ion beam and secondion beam. For example, only one of the first ion source 102 and thesecond ion source 116 is operated at a time, whereby the polarity of themagnet current 144 is selectively controlled, as illustrated in FIGS. 3Aand 3B, based on the desired operation of the first ion source or thesecond ion source.

The mass analyzing magnet 130 shown in FIGS. 1A-1B, for example,comprises a dipole magnet 152 (e.g., a uniform field magnet havingsubstantially flat poles) having a predetermined deflection angle 154associated therewith. In other words, the dipole magnet 152, forexample, is configured to deflect the first ion beam 104 and the secondion beam 124, respectively, by the predetermined deflection angle 154from the first beam path 106 and the second beam path 126, respectively.The predetermined deflection angle 154, for example, is betweenapproximately 70° and approximately 110°. In another example, thepredetermined deflection angle 154 is less than 90°. In the exampleshown in FIGS. 1A-1B, the predetermined deflection angle 154 is 70°,with approximately entrance pole rotation.

The present disclosure further contemplates various architectures of themass analyzing magnet 130, such as shown in FIGS. 2-6 . The massanalyzing magnet 130 shown in FIG. 4 , for example, comprises poles 156(only one of two poles is shown in FIG. 4 ), whereby the poles areconfigured to be indexed in areas 158, 160 where the first ion beam 104and second ion beam 124 are approximately two gap distances (e.g.,illustrated as hatched areas) from one another. The poles 156 of thedipole magnet 152, for example, can be planar, or the poles can beindexed or curved (not shown) based on desired characteristics of thedipole magnet. Further, the present disclosure contemplates the massanalyzing magnet 130 being asymmetric, whereby the first ion source 102and the second ion source 116 have differing deflection angles 154and/or pole face rotations.

The present disclosure appreciates that the first ion source 102 andsecond ion source 116 produce X-ray radiation when forming the first ionbeam 104 and second ion beam 124. Such X-ray radiation can be dangerousto an operator when performing maintenance on one of the first andsecond ion sources 102, 116 while the other is operating. Accordingly,referring again to FIGS. 5 and 6 , the present disclosure furtherprovides one or more shields 180 positioned in one or more of aninterior region 182 and an exterior region 184 of the mass analyzingmagnet 130, whereby the one or more shields are configured to prevent aline-of-sight between the first ion source 102 and the second ion source116.

The one or more shields 180, for example, generally permit an operatorto perform maintenance on the first ion source 102 while the second ionsource 116 is running (e.g., producing ions), or vice versa. Forexample, the one or more shields 180 allow for such removal/replacementof a source while the other source is warming up or operating, etc. Thepresent disclosure further contemplates provision of one or moreradiation detectors 185 (e.g., one or more X-ray detectors) to indicatesafe radiation levels during maintenance. The one or more radiationdetectors 185, for example, can be coupled to an interlock system (notshown) to permit access to the first ion source 102 and/or second ionsource 116 only when radiation levels fall below an acceptably safelevel.

The present disclosure further allows for switching between beam speciesvia the first ion source 102 and second ion source 116, while alsopermitting safe maintenance of one of the ion sources while the otherion source is operated to form the ion beam. As such, it can beappreciated that an “infinite source life” or “zero down time” can beattained, whereby the ion implantation system 100 of FIGS. 1A-1B can becontinuously operated utilizing one of the first ion source 102 and thesecond ion source 116.

Referring again to FIG. 2 , the interior region 182 and exterior region184, for example, are generally defined by one or more of the yoke 147,the coil 146, and the poles 156 of the mass analyzing magnet 130. Inaccordance with one example, the one or more shields 180 comprise acentral shield 186 positioned between the first entrance 132 and thesecond entrance 134 of the mass analyzing magnet 130 within the interiorregion 182 of the mass analyzing magnet, as illustrated in FIG. 5 . Forexample, the mass analyzed beam path 150 defines an exit axis 188, andwherein the central shield 186 is positioned along the exit axis. Theone or more shields 180, for example, can further comprise one or moreexternal magnet shields 190 positioned in the exterior region 184 of themass analyzing magnet 130, wherein the one or more external magnetshields generally extend from the mass analyzing magnet, such asparallel to the exit axis 188. FIG. 2 , for example, illustrates the oneor more external magnet shields 190 positioned in the exterior region184 of the mass analyzing magnet 130.

In another example, the first beam path 106 defines a first entranceaxis 192, as illustrated in FIG. 1A, and the second beam path defines asecond entrance axis 194, as illustrated in FIG. 1B. The one or moreshields 180, for example, can thus further comprise a first entranceshield 196 and a second entrance shield 198 respectively positionedalong the first entrance axis 192 and the second entrance axis 194, asillustrated in FIGS. 5 and 6 . In the present example, the firstentrance shield 196 and the second entrance shield 198 are shown asbeing positioned within the interior region 182 of the mass analyzingmagnet 130, however the first and second entrance shields may bealternatively provided within the exterior region 184.

In another example, the one or more external magnet shields 190 cancomprise an exit aperture 200 illustrated in FIG. 2 , wherein the exitaperture is defined along the mass analyzed beam path 150 to allow themass analyzed ion beam 148 to exit the mass analyzer magnet unimpeded.

Any of the one or more 180 shields, for example, comprises lead (Pb) toprevent transmission of x-ray radiation therethrough. For example, whilenot shown, the one or more shields 180 can comprise a lead sheet that islined with graphite to ameliorate sputtering of the lead into thebeamline, while providing adequate x-ray shielding. The lead, forexample, can be sandwiched with aluminum or other metal for additionalrigidity and handling properties. Alternatively, the one or more shieldscan comprise or be comprised of a non-magnetic steel or any high-Zmaterial, such as tungsten, in order to achieve shielding from the x-rayradiation.

The present disclosure appreciates that numerous other shapes andconfigurations of the mass analyzing magnet 130 and the one or moreshields 180 are possible, such as varying arrangements of the poles,yoke, coil, etc., whereby the one or more shields can be tailored to fitthe analyzing magnet and configuration and placement of the first andsecond ion sources 102, 116. It shall be appreciated that all suchconfigurations are considered to fall within the scope of the presentdisclosure.

In accordance with a further aspect of the disclosure, as illustratedagain in FIGS. 1A-1B, a plurality of beamline components 140 are furtherarranged downstream of the mass analyzing magnet 130, whereby theplurality of beamline components are configured to direct the massanalyzed ion beam 148 towards a workpiece 204 positioned on a workpieceholder 206. The plurality of beamline components, for example, compriseone or more of an accelerator, a decelerator, an energy filter, anaperture, a focusing lens, a steering lens, a measurement apparatus, anangular energy filter, a measurement system, a scanner, and a corrector.

In accordance with yet another exemplary aspect of the disclosure, themagnet control circuitry 142 can comprise any controller that isoperably coupled to the ion implantation system 100 for control of thesystem. For example, the controller is operably coupled to, andconfigured to control, one or more of the first ion source 102, secondion source 116, first source arc current 110, second source arc current120, and any of the plurality of beamline components 140 such as anyextraction assembly, aperture, focus and/or steering element, scannerapparatus, combined lens system, energy resolving system, beam andworkpiece neutralization system, measurement system, and workpieceholder and translation system.

In accordance with another example aspect of the present invention, FIG.7 illustrates a method 500 for maintaining an ion implantation system.It should be noted that while exemplary methods are illustrated anddescribed herein as a series of acts or events, it will be appreciatedthat the present invention is not limited by the illustrated ordering ofsuch acts or events, as some steps may occur in different orders and/orconcurrently with other steps apart from that shown and describedherein, in accordance with the invention. In addition, not allillustrated steps may be required to implement a methodology inaccordance with the present invention. Moreover, it will be appreciatedthat the methods may be implemented in association with the systemsillustrated and described herein as well as in association with othersystems not illustrated.

The method 500, for example, comprises providing one or more shieldswithin a mass analyzing magnet in act 502, and applying a polarity of amagnet current to the mass analyzing magnet in act 504. A first sourcecurrent, for example, is applied to a first ion source in act 506,thereby forming and directing a first ion beam toward a first entranceof a mass analyzing magnet along a first beam path. The first ion beamis mass analyzed in act 508, whereby the first ion beam is deflectedbetween approximately 70° and approximately 110°.

In act 510, the first source current applied to the first ion source ishalted, thereby extinguishing the first ion beam. In act 512, thepolarity of the magnet current applied to the mass analyzing magnet isreversed, and in act 514, a second source current is applied to a secondion source, thereby forming and directing a second ion beam toward asecond entrance of the mass analyzing magnet along a second beam path.The second ion beam is further mass analyzed in act 516, whereby thesecond beam path is also deflected between approximately 70° andapproximately 110°.

In act 518, for example, maintenance is safely performed on the firstion source concurrent to forming the second ion beam, whereby aline-of-sight between the first ion source and second ion source isprevented by the one or more shields positioned within the massanalyzing magnet, thereby blocking x-rays from the second ion source.

It is to be further appreciated that the above methodology can besimilarly practiced for safely maintaining the second ion source in asimilar manner. The systems and methods of the present disclosure thusprovide for safely maintaining each of the first and second ion sourceswhile the other of the first and second ion sources is operated forforming the ion beam and/or implantation of ions into the workpiece.

Although the invention has been shown and described with respect to acertain preferred embodiment or embodiments, it is obvious thatequivalent alterations and modifications will occur to others skilled inthe art upon the reading and understanding of this specification and theannexed drawings. In particular regard to the various functionsperformed by the above described components (assemblies, devices,circuits, etc.), the terms (including a reference to a “means”) used todescribe such components are intended to correspond, unless otherwiseindicated, to any component which performs the specified function of thedescribed component (i.e., that is functionally equivalent), even thoughnot structurally equivalent to the disclosed structure which performsthe function in the herein illustrated exemplary embodiments of theinvention. In addition, while a particular feature of the invention mayhave been disclosed with respect to only one of several embodiments,such feature may be combined with one or more other features of theother embodiments as may be desired and advantageous for any given orparticular application.

What is claimed is:
 1. An ion implantation system comprising: a massanalyzing magnet comprising a yoke and a coil defining a first entrance,a second entrance, and an exit of the mass analyzing magnet; a first ionsource configured to define a first ion beam directed toward the firstentrance of the mass analyzing magnet along a first beam path; a secondion source configured to define a second ion beam directed toward thesecond entrance of the mass analyzing magnet along a second beam path;and a magnet current source configured to supply a magnet current to themass analyzing magnet; and magnet control circuitry coupled to the massanalyzing magnet and magnet current source, wherein the magnet controlcircuitry is configured to selectively control a polarity of the magnetcurrent supplied to the mass analyzing magnet based on a selectiveformation of each of the first ion beam and the second ion beam, whereinthe mass analyzing magnet is configured to mass analyze the first ionbeam and second ion beam, respectively, thereby defining a mass analyzedion beam at the exit of the mass analyzing magnet along a mass analyzedbeam path.
 2. The ion implantation system of claim 1, further comprisinga central shield positioned within an interior region of the massanalyzing magnet along the mass analyzed beam path, wherein the centralshield is configured to prevent a line-of-sight between the first ionsource and the second ion source.
 3. The ion implantation system ofclaim 1, further comprising one or more external magnet shieldspositioned in an exterior region of the mass analyzing magnet andextending generally perpendicular to the mass analyzed beam path,wherein the one or more external magnet shields are configured toprevent a line-of-sight between the first ion source and the second ionsource.
 4. The ion implantation system of claim 1, further comprising afirst entrance shield and a second entrance shield respectivelypositioned along the first beam path and the second beam path, whereinthe first entrance shield and the second entrance shield are configuredto prevent a line-of-sight between the first ion source and the secondion source.
 5. The ion implantation system of claim 4, wherein the firstentrance shield and the second entrance shield are positioned within aninterior region of the mass analyzing magnet.
 6. The ion implantationsystem of claim 1, further comprising: a first entrance shieldpositioned along the first beam path; and a second entrance shieldpositioned along the second beam path, wherein the first entrance shieldand the second entrance shield are configured to prevent a line-of-sightbetween the first ion source and the second ion source.
 7. The ionimplantation system of claim 1, wherein the mass analyzing magnetcomprises a dipole magnet having two poles that are substantially flat,indexed, or curved.
 8. The ion implantation system of claim 1, furthercomprising a plurality of beamline components arranged downstream of themass analyzing magnet and configured to direct the mass analyzed ionbeam towards a workpiece.
 9. An ion implantation system comprising: amass analyzing magnet comprising a yoke and a coil defining a firstentrance, a second entrance, and an exit of the mass analyzing magnet,and wherein one or more of the yoke and the coil define an interiorregion and an exterior region of the mass analyzing magnet; a first ionsource configured to define a first ion beam directed toward the firstentrance of the mass analyzing magnet along a first beam path; a secondion source configured to define a second ion beam directed toward thesecond entrance of the mass analyzing magnet along a second beam path;and a magnet current source configured to supply a magnet current to themass analyzing magnet, wherein the mass analyzing magnet is configuredto mass analyze the first ion beam and second ion beam, respectively,thereby defining a mass analyzed ion beam at the exit of the massanalyzing magnet along a mass analyzed beam path; and one or moreshields positioned in one or more of the interior region and exteriorregion of the mass analyzing magnet and configured to prevent aline-of-sight between the first ion source and the second ion source.10. The ion implantation system of claim 9, wherein the one or moreshields comprise a central shield positioned between the first entranceand the second entrance of the mass analyzing magnet within the interiorregion of the mass analyzing magnet.
 11. The ion implantation system ofclaim 9, wherein the one or more shields comprise one or more externalmagnet shields positioned in the exterior region of the mass analyzingmagnet and extending generally perpendicular to the mass analyzed beampath.
 12. The ion implantation system of claim 9, wherein the one ormore shields comprise a first entrance shield and a second entranceshield respectively positioned along the first beam path and the secondbeam path.
 13. The ion implantation system of claim 12, wherein thefirst entrance shield and the second entrance shield are positionedwithin the interior region of the mass analyzing magnet.
 14. The ionimplantation system of claim 9, wherein the one or more shields compriseone or more external magnet shields positioned in the exterior region ofthe mass analyzing magnet, and wherein the one or more external magnetshields comprise an exit aperture defined along the mass analyzed beampath.
 15. The ion implantation system of claim 9, wherein the one ormore shields are configured to generally prevent a transmission of x-rayradiation between the first ion source and the second ion source. 16.The ion implantation system of claim 9, wherein the mass analyzingmagnet comprises a dipole magnet having two poles that are substantiallyflat, indexed, or curved.
 17. An ion implantation system comprising: amass analyzing magnet having a first entrance, a second entrance, and anexit defined therein; a first ion source configured to define a firstion beam directed toward the first entrance of the mass analyzing magnetalong a first beam path; a second ion source configured to define asecond ion beam directed toward the second entrance of the massanalyzing magnet along a second beam path; and a magnet current sourceconfigured to supply a magnet current to the mass analyzing magnet,wherein the mass analyzing magnet is configured to mass analyze thefirst ion beam and second ion beam, respectively, thereby defining amass analyzed ion beam at the exit of the mass analyzing magnet along amass analyzed beam path; and one or more shields configured to prevent aline-of-sight between the first ion source and the second ion source.18. The ion implantation system of claim 17, wherein the one or moreshields comprise a central shield positioned between the first entranceand the second entrance of the mass analyzing magnet within an interiorregion of the mass analyzing magnet.
 19. The ion implantation system ofclaim 17, wherein the one or more shields comprise a first entranceshield and a second entrance shield respectively positioned along thefirst beam path and the second beam path.
 20. The ion implantationsystem of claim 17, wherein the one or more shields comprise one or moreexternal magnet shields positioned in an exterior region of the massanalyzing magnet, and wherein the one or more external magnet shieldscomprise an exit aperture defined along the mass analyzed beam path.